PART |
Description |
Maker |
MC14082BDR2G MC14011 MC14071BCP MC1408 MC14001BCPG |
B-Suffix Series CMOS Gates IEEE 802.3af PoE HIGH POWER PD CONTROLLER 8-SO PowerPAD -40 to 85 Triple 3-Input NOR Gate Quad 2-Input AND Gate Dual-Slot Cardbus Power-Interface Switches for Serial PCMCIA Controllers 24-HTSSOP -40 to 85 B-SUFFIX SERIES CMOS GATES 4000/14000/40000 SERIES, TRIPLE 3-INPUT AND GATE, PDIP14 B-Suffix Series CMOS Gates 后缀系列CMOS B-SUFFIX SERIES CMOS GATES 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14 B-SUFFIX SERIES CMOS GATES 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDIP14
|
Motorola, Inc ONSEMI[ON Semiconductor]
|
V53C256A V53C256P80L V53C256XXXX |
(V53C256A Series) High Performance / Low Power 256k x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16 FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16 LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto... Honeywell International, Inc. BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
TS27M4AC TS27M4AI TS27M4AM TS27M4BC TS27M4BI TS27M |
PRECISION LOW POWER CMOS CMOS OP-AMPS PRECISION LOW POWER CMOS QUAD OPERATIONAL AMPLIFIERS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
74LCX240FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
TC74LCXZA244FK TC74LCXZA244FT |
74LCX low voltage CMOS logic IC series
|
TOSHIBA
|
IC62C1024AL IC62C1024ALNEW IC62C1024AL-35QI IC62C1 |
55ns; 5V; 128K x 8 low power CMOS static RAM 128K X 8 LOW POWER CMOS SRAM From old datasheet system ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
|
ICSI[Integrated Circuit Solution Inc]
|